RF Transistors

67 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Tagore Technology, MACOM
  • Supply Voltage : 48 to 51 V
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Communication, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:15 W GaN on Si Transistor from DC to 2.7 GHz
Application Industry:
Radar, Cellular, RF Energy, Avionics, Test & Measu...
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.7 GHz
Power:
41.8 to 44.3 dBm
Package Type:
Surface Mount
Power(W):
15.13 to 26.91 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:500 Watt GaN on Silicon Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
Pulse
Frequency:
1200 to 1400 MHz
Power:
57 dBm
Package Type:
Surface Mount
Power(W):
500 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:3.1 to 3.5 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
3.1 to 3.5 GHz
Power:
49.29 dBm
Package Type:
Surface Mount
Power(W):
84.92 W
Gain:
25 dB
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:2.7 to 3.3 GHz, GaN on Si HEMT for Aerospace & Defence Application
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
2.7 to 3.3 GHz
Power:
49.29 dBm
Package Type:
Surface Mount
Power(W):
84.92 W
Gain:
25 dB
Supply Voltage:
50 V
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Package Type:
Die
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info

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