RF Transistors

99 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Tagore Technology, Wolfspeed
  • Supply Voltage : 48 to 51 V
Description:800 W GaN Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
0.9 to 1.4 GHz
Power:
59 dBm
Package Type:
Flanged
Power(W):
794 W
Gain:
15 dB
Supply Voltage:
50 V
more info
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Communication, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:145 W GaN-on SiC-HEMT from 8.4 to 9.6 GHz
Application Industry:
Radar
Transistor Type:
FET, HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
7.9 to 9.6 GHz
Power:
50 to 51.61 dBm
Package Type:
4-Hole Flanged
Power(W):
100 to 145 W
Supply Voltage:
48 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:450 W GaN-on-SiC HEMT from 758 to 960 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
758 to 960 MHz
Power:
59.54 dBm
Package Type:
Earless Flanged
Power(W):
900 W (P4)
Gain:
18 dB
Supply Voltage:
48 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:25 W Surface-Mount LDMOS FET from 500 to 1400 MHz
Application Industry:
Cellular, Radar
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
500 to 1400 MHz
Power:
44 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
18.5 to 19.5 dB
Supply Voltage:
0 to 55 V
Package:
PG-SON-16
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:500 W GaN-on-SiC HEMT from 2515 to 2675 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.515 to 2.675 GHz
Power:
57 dBm (P3)
Package Type:
Earless Flanged
Power(W):
501.19 W
Gain:
15 dB
Supply Voltage:
48 V
more info

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