RF Transistors

238 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Tagore Technology, Integra Technologies, Inc.
Description:400 W GaN HEMT from 2.7 to 2.9 GHz for Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 to 2.9 GHz
Power:
56 dBm
Package Type:
Flanged
Power(W):
400 W
Gain:
17 to 20 dB
Supply Voltage:
50 V
more info
Description:6 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Cellular
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 to 32 V
Package:
16 Pin QFN
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:3.2 kW, GaN RF Transistor from DC to 1.3 GHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
65.05 dBm
Package Type:
2-Hole Flanged
Power(W):
3.2 kW
Supply Voltage:
100 V
more info
Description:25 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Cellular, Military
Transistor Type:
DHEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
44 dBm
Power(W):
25.11 W
Gain:
17.5 dB
Supply Voltage:
32 to 34 V
Package:
8 Pin QFN
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:GaN RF Transistor for Electronic Warfare
Application Industry:
Electronic Warfare
Technology:
GaN
CW/Pulse:
CW
Package Type:
2-Hole Flanged
Supply Voltage:
100 V
more info
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Cellular, Broadcast
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:2.5 kW, GaN RF Transistor from 1 to 2 GHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
63.98 dBm
Package Type:
2-Hole Flanged
Power(W):
2.5 kW
Supply Voltage:
100 V
more info

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