RF Transistors

125 RF Transistors from 2 Manufacturers meet your specification.
Selected Filters Reset All
  • Manufacturers: Gallium Semiconductor, Tagore Technology, Integra Technologies, Inc.
  • Supply Voltage : 48 to 51 V
Description:400 W GaN HEMT from 2.7 to 2.9 GHz for Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 to 2.9 GHz
Power:
56 dBm
Package Type:
Flanged
Power(W):
400 W
Gain:
17 to 20 dB
Supply Voltage:
50 V
more info
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Communication, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:10 W GaN on SiC HEMT from DC to 8 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 8 GHz
Power:
41.76 dBm
Package Type:
Die
Power(W):
15 W
Gain:
16.5 to 17.8 dB
Supply Voltage:
50 V
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Package Type:
Die
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Package Type:
Die
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info
Description:50 W GaN Power Transistor from 8.9 to 9.4 GHz for X-Band Radars
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
8.9 to 9.4 GHz
Power:
49.03 dBm
Power(W):
80 W
Gain:
10 dB
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Package Type