RF Transistors

64 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Tagore Technology, RFHIC
  • Supply Voltage : 48 to 51 V
Description:300 W GaN Asymmetrical Doherty HEMT from 2620 to 2690 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2620 to 2690 MHz
Power:
47.3 dBm
Package Type:
Flanged
Power(W):
54 W
Gain:
14.1 to 14.2 dB
Supply Voltage:
48 to 52 V
Package:
RF18010DKR3
more info
Description:110 W CW/Pulsed GaN HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Communication, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.4 dBm
Package Type:
Flanged
Gain:
15 to 23 dB
Supply Voltage:
50 V
Package:
NI-360 Ceramic Package
more info
Description:330 W GaN on SiC HEMT from 2.3 to 2.5 GHz
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2300 to 2500 MHz
Power:
55.2 to 55.4 dBm (Psat)
Package Type:
Flanged
Power(W):
330 to 347 W (Psat)
Gain:
13.5 to 13.6 dB
Supply Voltage:
48 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:200 W Asymmetrical Doherty GaN HEMT from 2520 to 2630 MHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2520 to 2630 MHz
Power:
46 dBm
Package Type:
Flanged
Power(W):
40 W
Gain:
14.1 to 14.5 dB
Supply Voltage:
48 to 52 V
Package:
RF18010DKR3
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:275 W GaN Asymmetrical Doherty HEMT from 1880 to 2025 MHz
Application Industry:
Cellular, Wi-Fi / Bluetooth
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1880 to 2025 MHz
Power:
53.01 to 54.5 dBm (Psat)
Package Type:
Flanged
Power(W):
200 to 282 W (Psat)
Gain:
14.8 to 15.3 dB
Supply Voltage:
48 to 52 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:275 W Asymmetrical Doherty GaN HEMT from 1805 to 1880 MHz
Application Industry:
Cellular, Wi-Fi / Bluetooth
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1805 to 1880 MHz
Power:
53.01 to 55.2 dBm (Psat)
Package Type:
Flanged
Power(W):
200 to 331 W (Psat)
Gain:
13.4 to 13.8 dB
Supply Voltage:
48 to 52 V
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info

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