RF Transistors

38 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Tagore Technology, Broadcom
  • Frequency: 800 to 900 MHz (Outside this range )
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Cellular, Broadcast
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:80 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Instrumentation, Communica...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
49.03 dBm
Package Type:
Surface Mount
Power(W):
79.98 W
Gain:
15.1 to 17.2 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Package Type:
Die
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:155 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Instrumentation, Communica...
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 3.2 GHz
Power:
51.9 dBm
Package Type:
Surface Mount
Power(W):
154.88 W
Gain:
13.5 to 18.7 dB
Supply Voltage:
50 V
Package:
DFN
more info
Description:Single Voltage E-pHEMT Low Noise 45.5 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
400 MHz to 3.9 GHz
Power:
29 dBm
Package Type:
Chip
Power(W):
0.79 W
Supply Voltage:
4.5 V
Package:
SMT 2x2
more info
Description:Single Voltage E-pHEMT Low Noise 45 dBm OIP3 in SOT-89 package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
400 MHz to 3.9 GHz
Power:
29 dBm
Package Type:
Surface Mount
Power(W):
0.79 W
Supply Voltage:
4.5 V
Package:
SOT-89
more info

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