RF Transistors

45 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, MicroWave Technology
Description:18 GHz GaAs MESFET for Military and Commercial Applications
Application Industry:
Commercial, Military, Space
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 18 GHz
Power:
26.5 dBm
Package Type:
Chip
Power(W):
0.45 W
Supply Voltage:
2 to 7 V
more info
Description:200 W, GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Package Type:
Die
Gain:
18.4 dB
Supply Voltage:
50 V
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 28 GHz
Application Industry:
Commercial, Military, Space
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 28 GHz
Power:
28.5 dBm
Package Type:
Chip
Power(W):
0.71 W
Supply Voltage:
2.5 to 8 V
more info
Description:250 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18.6 dB
Supply Voltage:
50 V
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 12 GHz
Application Industry:
Commercial, Military, Space
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
30.5 dBm
Package Type:
Chip
Power(W):
1.12 W
Supply Voltage:
2 to 8 V
more info
Description:300 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
18 dB
Supply Voltage:
50 V
more info
Description:400 W, GaN on SiC HEMT from DC to 2.9 GHz
Application Industry:
Cellular, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 2.9 GHz
Package Type:
Die
Gain:
17.8 dB
Supply Voltage:
50 V
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 28 GHz
Application Industry:
Commercial, Military, Space
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 28 GHz
Power:
23 dBm
Package Type:
Chip
Power(W):
0.2 W
Supply Voltage:
2.5 to 8 V
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Package Type:
Die
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:AlGaAs/InGaAs pHEMT for Military & Space Applications Up to 28 GHz
Application Industry:
Commercial, Military, Space
Transistor Type:
pHEMT
Technology:
AlGaAs/InGaAs
CW/Pulse:
CW
Frequency:
DC to 28 GHz
Power:
24.5 dBm
Package Type:
Chip
Power(W):
0.28 W
Supply Voltage:
2.5 to 8 V
more info

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