RF Transistors

30 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Gallium Semiconductor, Broadcom
Description:Single Voltage E-pHEMT Low Noise 42 dBm OIP3 in SOT-89 package
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
27 dBm
Power(W):
0.5 W
Supply Voltage:
4.5 V
Package:
SOT-89
more info
Description:60 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
49.03 dBm
Power(W):
79.98 W
Gain:
14.5 to 16 dB
Supply Voltage:
50 V
more info
Description:PHEMT Low Noise 31 dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
19 dBm
Power(W):
0.08 W
Supply Voltage:
4 V
Package:
SMT 1.4x1.2
more info
Description:30 W GaN on SiC HEMT from DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.99 dBm
Power(W):
50 W
Gain:
14.5 to 16.2 dB
Supply Voltage:
50 V
more info
Description:Single Voltage E-pHEMT Low Noise 38 dBm OIP3 in LPCC
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
0.05 to 6 GHz
Power:
24.5 dBm
Power(W):
0.28 W
Supply Voltage:
4 V
Package:
SMT 2x2
more info
Description:80 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
14.5 to 15.5 dB
Supply Voltage:
50 V
more info
Description:Single Voltage E-pHEMT Low Noise 36 dBm OIP3 in MiniPak
Application Industry:
Wireless Infrastructure
Transistor Type:
E-pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
21.4 dBm
Power(W):
0.14 W
Supply Voltage:
3 V
Package:
SMT 1.4x1.2
more info
Description:90 W GaN on SiC HEMT from DC to 3.7 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.7 GHz
Power:
50.41 dBm
Power(W):
109.9 W
Gain:
14 to 15.5 dB
Supply Voltage:
50 V
more info
Description:135 W GaN on SiC HEMT from DC to 3.2 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN, GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 3.2 GHz
Power:
52.15 dBm
Power(W):
164.06 W
Gain:
15.4 to 20.2 dB
Supply Voltage:
50 V
more info
Description:SC-70 (SOT-343) Low Noise 31.5 dBm OIP3
Application Industry:
Wireless Infrastructure
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
450 MHz to 10 GHz
Power:
20 dBm
Power(W):
0.1 W
Supply Voltage:
4 V
Package:
SOT-343
more info

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