RF Transistors

239 RF Transistors from NXP Semiconductors meet your specification.
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  • Manufacturers: NXP Semiconductors
  • Transistor Type: LDMOS
MRFE6S9160HS Image
Description:Single N-CDMA Lateral N-Channel RF Power MOSFET, 880 MHz, 35 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
865 to 960 MHz
Power:
45.44 dBm
Package Type:
Flanged
Power(W):
34.99 W
Supply Voltage:
28 V
Package:
CASE 465A-06, STYLE 1 NI-780S
more info
MHT1002N Image
Description:RF Power LDMOS Transistor for Consumer and Commercial Cooking, 915 MHz, 350 W, 48 V
Application Industry:
ISM, RF Energy, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
915 MHz
Power:
55.44 dBm
Package Type:
Flanged
Power(W):
349.95 W
Supply Voltage:
48 V
Package:
OM--780--4L PLASTIC
more info
MRF6V3090N Image
Description:Broadband RF Power LDMOS Transistor, 470-860 MHz, 90 W, 50 V
Application Industry:
Aerospace & Defence, Commercial, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
470 MHz to 1.215 GHz
Power:
42.55 to 49.54 dBm
Package Type:
Flanged
Power(W):
89.95 W
Supply Voltage:
50 V
Package:
TO--270WB--4 PLASTIC
more info
AFT05MS004N Image
Description:Wideband RF Power LDMOS Transistor, 136-941 MHz, 4 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
136 to 941 MHz
Power:
36.02 dBm
Package Type:
Surface Mount
Power(W):
4 W
Supply Voltage:
7.5 V
Package:
SOT--89
more info
AFV10700H Image
Description:700 W LDMOS RF Power Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence, Broadcast, Radar, Wireless In...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.03 to 1.09 GHz
Power:
58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Supply Voltage:
52 V
Package:
NI--780H--4L
more info
A2T18S160W31S Image
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995 MHz, 32 W AVG. 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
45.05 dBm
Package Type:
Flanged
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780S--2L2LA
more info
MW7IC2425NB Image
Description:Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V
Application Industry:
ISM, Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
2.4 to 2.5 GHz
Power:
43.98 dBm
Package Type:
Flanged
Power(W):
25 W
Supply Voltage:
28 V
Package:
CASE 1329-09 TO-272 WB-16 PLASTIC
more info
MRF8S9200N Image
Description:Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
920 to 960 MHz
Power:
47.63 dBm
Package Type:
Flanged
Power(W):
57.94 W
Supply Voltage:
28 V
Package:
CASE 2021--03, STYLE 1 OM--780--2 PLASTIC
more info
MRF1517N Image
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 7.5 V
Application Industry:
Wireless Infrastructure, Broadcast, Commercial
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
39.03 dBm
Package Type:
Surface Mount
Power(W):
8 W
Supply Voltage:
7.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
AFV141KHS Image
Description:BROADBAND RF POWER LDMOS TRANSISTOR, 960-1215 MHz, 1000 W PEAK, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Supply Voltage:
50 V
Package:
NI--1230S--4S
more info

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