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RF Transistors - Mitsubishi Electric US, Inc.

48 RF Transistors from Mitsubishi Electric US, Inc. meet your specification.
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Mitsubishi Electric US, Inc. - RD16HHF1

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 30 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
42.04 dBm
Package Type:
Flanged
Power(W):
16 W
Supply Voltage:
12.5 V
more info
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Mitsubishi Electric US, Inc. - MGF1941AL

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
15 dBm
Package Type:
Flanged
Power(W):
0.03 W
Gain:
9 dB
Supply Voltage:
3 V
more info
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Mitsubishi Electric US, Inc. - MGF3022AM

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 2.4 GHz
Power:
16.5 dBm
Package Type:
Flanged
Power(W):
0.04 W
Gain:
15 dB
Supply Voltage:
3 V
more info
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Mitsubishi Electric US, Inc. - MGF4841AL

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.04 W
Supply Voltage:
2.5 V
more info
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Mitsubishi Electric US, Inc. - MGF4841CL

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 24.3 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 24.3 GHz
Power:
11.5 dBm
Package Type:
Flanged
Power(W):
0.01 W
Supply Voltage:
1.5 V
more info
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Mitsubishi Electric US, Inc. - MGF4921AM

RF Transistor from Mitsubishi Electric US, Inc.
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Description:2.4 to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
2.4 to 4 GHz
Package Type:
Flanged
Gain:
13 to 18 dB
Supply Voltage:
2 V
more info
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Mitsubishi Electric US, Inc. - MGF4934BM

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11.5 to 12.5 dB
Supply Voltage:
2 V
more info
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Mitsubishi Electric US, Inc. - MGF4934CM

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11.5 to 13 dB
Supply Voltage:
2 V
more info
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Mitsubishi Electric US, Inc. - MGF4935AM

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11 to 12 dB
Supply Voltage:
2 V
more info
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Mitsubishi Electric US, Inc. - MGF4937AM

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11.5 to 13 dB
Supply Voltage:
2 V
more info
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