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RF Transistors - Mitsubishi Electric US, Inc.

49 RF Transistors from Mitsubishi Electric US, Inc. meet your specification.

RF Transistors from Mitsubishi Electric US, Inc. are listed on everything RF. We have compiled a list of RF Transistors from the Mitsubishi Electric US, Inc. website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Mitsubishi Electric US, Inc. and their distributors in your region.

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  • Manufacturers: Mitsubishi Electric US, Inc.
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RD06LUS2 Image
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Mitsubishi Electric US, Inc. - RD06LUS2

RF Transistor from Mitsubishi Electric US, Inc.
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Description:520 MHz, 6.5 W Silicon Power MOSFET for VHF/UHF Radio Applications
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
CW/Pulse:
CW
Frequency:
520 MHz
Power:
38.13 dBm
Package Type:
Surface Mount
Power(W):
6.5 W
more info
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Mitsubishi Electric US, Inc. - RD12MVS1

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 175 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 175 MHz
Power:
40.61 dBm
Package Type:
Flanged
Power(W):
11.51 W
Supply Voltage:
7.2 V
more info
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Mitsubishi Electric US, Inc. - MGF4935AM

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Package Type:
Flanged
Gain:
11 to 12 dB
Supply Voltage:
2 V
more info
MGFK48G2732A Image
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Mitsubishi Electric US, Inc. - MGFK48G2732A

RF Transistor from Mitsubishi Electric US, Inc.
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Description:70 W GaN HEMT from 12.75 to 13.25 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
Frequency:
12.75 to 13.25 GHz
Power:
47.3 to 48.3 dBm
Package Type:
Flanged
Power(W):
53.7 to 67.6 W
Supply Voltage:
24 V
more info
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Mitsubishi Electric US, Inc. - RD07MUS2B

RF Transistor from Mitsubishi Electric US, Inc.
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Description:175 to 870 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 870 MHz
Power:
38.45 to 39.03 dBm
Package Type:
Flanged
Power(W):
8 W
Gain:
11.5 to 13.8 dB
Supply Voltage:
7.2 V
more info
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Mitsubishi Electric US, Inc. - RD05MMP1

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 941 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 941 MHz
Power:
37.4 to 37.78 dBm
Package Type:
Flanged
Power(W):
6 W
Gain:
8.9 dB
Supply Voltage:
7.2 V
more info
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Mitsubishi Electric US, Inc. - RD100HHF1C

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 30 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 30 MHz
Power:
50 to 50.41 dBm
Package Type:
Flanged
Power(W):
109.9 W
Gain:
11.5 dB
Supply Voltage:
12.5 V
more info
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Mitsubishi Electric US, Inc. - RD02LUS2

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 470 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure, Broadcast
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
DC to 470 MHz
Power:
33.62 dBm
Package Type:
Flanged
Power(W):
2.3 W
Gain:
10 dB
Supply Voltage:
3.6 V
more info
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Mitsubishi Electric US, Inc. - MGF4841AL

RF Transistor from Mitsubishi Electric US, Inc.
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Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
InGaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
16 dBm
Package Type:
Flanged
Power(W):
0.04 W
Supply Voltage:
2.5 V
more info
MGFK45G3745A Image
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Mitsubishi Electric US, Inc. - MGFK45G3745A

RF Transistor from Mitsubishi Electric US, Inc.
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Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
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