RF Transistors - Mitsubishi Electric US, Inc.

47 RF Transistors from Mitsubishi Electric US, Inc. meet your specification.
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  • Manufacturers : Mitsubishi Electric US, Inc.
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:30 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Power(W):
26.91 to 33.88 W
Supply Voltage:
27 V
Package:
GF-68
more info
Description:100 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50.2 dBm
Power(W):
79.43 to 104.7 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Power(W):
70 W
Gain:
11 dB
more info
Description:100W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
13.75 to 14.5 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
10 dB
more info
Description:Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
46.53 dBm
Power(W):
44.98 W
Supply Voltage:
12.5 V
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
45.44 dBm
Power(W):
34.99 W
Supply Voltage:
12.5 V
more info
Description:175 to 530 MHz, MOSFET Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
CW
Frequency:
175 to 530 MHz
Power:
48.75 to 49.24 dBm
Power(W):
83.95 W
Supply Voltage:
12.5 V
more info