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12 RF Transistors from Mitsubishi Electric US, Inc. meet your specification.
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  • Manufacturers: Mitsubishi Electric US, Inc.
  • Application Industry: SATCOM
MGFK48G2732A Image
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Mitsubishi Electric US, Inc. - MGFK48G2732A

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:70 W GaN HEMT from 12.75 to 13.25 GHz for SATCOM Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
Frequency:
12.75 to 13.25 GHz
Power:
47.3 to 48.3 dBm
Package Type:
Flanged
Power(W):
53.7 to 67.6 W
Supply Voltage:
24 V
more info
MGFK45G3745 Image
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Mitsubishi Electric US, Inc. - MGFK45G3745

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
MGFK50G3745 Image
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Mitsubishi Electric US, Inc. - MGFK50G3745

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
MGFK45G3745A Image
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Mitsubishi Electric US, Inc. - MGFK45G3745A

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
MGFK48G3745A Image
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Mitsubishi Electric US, Inc. - MGFK48G3745A

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Package Type:
Flanged
Power(W):
70 W
Gain:
11 dB
more info
MGFK50G3745A Image
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Mitsubishi Electric US, Inc. - MGFK50G3745A

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:100W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
more info
MGFG5H3001 Image
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Mitsubishi Electric US, Inc. - MGFG5H3001

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info
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Mitsubishi Electric US, Inc. - MGFK48G3745

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
48.45 dBm
Package Type:
Flanged
Power(W):
69.98 W
Supply Voltage:
24 V
more info
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Mitsubishi Electric US, Inc. - MGFG5H1503

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
43.01 dBm
Package Type:
Flanged
Power(W):
20 W
Supply Voltage:
24 V
more info
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Mitsubishi Electric US, Inc. - MGFK47G3745A

RF Transistor from Mitsubishi Electric US, Inc.  
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Description:13.75 to 14.5 GHz, HEMT Transistor
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
46.99 dBm
Package Type:
Flanged
Power(W):
50 W
Supply Voltage:
24 V
more info
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