RF Transistors

260 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Mitsubishi Electric US, Inc., Sainty-Tech Communications Limited
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:40 dBm, Si Power Transistor from 220 to 260 MHz
Technology:
Si
CW/Pulse:
Pulse
Frequency:
220 to 260 MHz
Power:
40 dBm
Power(W):
10 W
Gain:
15.7 dB
Supply Voltage:
28 V
Package:
PG1021A
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:54 dBm, Si Power Transistor from 138 to 188 MHz
Technology:
Si
CW/Pulse:
Pulse
Frequency:
138 to 188 MHz
Power:
54 dBm
Power(W):
250 W
Gain:
16 dB
Supply Voltage:
32 V
Package:
PG1021A
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
Description:52 dBm, Si Power Transistor from 220 to 260 MHz
Technology:
Si
CW/Pulse:
Pulse
Frequency:
220 to 260 MHz
Power:
52 dBm
Power(W):
150 W
Gain:
15.7 dB
Supply Voltage:
28 V
Package:
PG1021A
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:40 dBm, GaAs Transistor operating at 1.24 to 1.3 GHz
Technology:
GaAs
Frequency:
1.24 to 1.3 GHz
Power:
40 dBm
Power(W):
10 W
Gain:
15 dB
Supply Voltage:
9 V
Package:
QF136H
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Package Type:
Flanged
Power(W):
70 W
Gain:
11 dB
more info
Description:19.5 dBm, GaAs MOSFET Transistor operating at 14.5 GHz
Transistor Type:
MOSFET
Technology:
GaAs
Frequency:
14.5 GHz
Power:
19.5 dBm
Power(W):
0.09 W
Gain:
6 dB
Supply Voltage:
10 V
Package:
QF062
more info

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