RF Transistors

298 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers : Mitsubishi Electric US, Inc., NXP Semiconductors
Description:Doherty GaN Power Transistor from 100 to 2690 MHz
Application Industry:
Cellular, Wireless Infrastructure, Base Station
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
100 to 2690 MHz
Power:
37.48 39.03 dBm
Power(W):
5.6 to 8 W
Supply Voltage:
48 V
Package:
DFN
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Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
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Description:300 W RF Power GaN Transistor for Cooking Applications
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.8 dBm
Power(W):
300 W
Gain:
15.2 dB
Supply Voltage:
50 V
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Description:30 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Power(W):
26.91 to 33.88 W
Supply Voltage:
27 V
Package:
GF-68
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Description:300 W RF GaN Power Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2400 to 500 MHz
Power:
54.87 to 55.26 dBm
Power(W):
307 to 336 W
Gain:
14.9 to 15.3 dB
Supply Voltage:
50 V
Package:
4 Terminals Ceramic
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Description:100 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50.2 dBm
Power(W):
79.43 to 104.7 W
Supply Voltage:
27 V
Package:
GF-69
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Description:36 W Doherty RF Power GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.56 dBm
Power(W):
36 W
Supply Voltage:
0 to 55 Vdc
Package:
NI-400S-2S
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
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Description:56 W Doherty RF Power GaN Transistor from 2496 to 2960 MHz
Application Industry:
Cellular
Technology:
GaN on SiC, Si, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.496 to 2.69 GHz
Power:
57 dBm (P3dB)
Power(W):
500 W ( P3dB)
Gain:
12.7 to 15.7 dB
Supply Voltage:
48 V
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Power(W):
70 W
Gain:
11 dB
more info