RF Transistors

303 RF Transistors from 3 Manufacturers meet your specification.
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  • Manufacturers : Mitsubishi Electric US, Inc., NXP Semiconductors, ICONIC RF
Description:Doherty GaN Power Transistor from 100 to 2690 MHz
Application Industry:
Cellular, Wireless Infrastructure, Base Station
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
100 to 2690 MHz
Power:
37.48 39.03 dBm
Power(W):
5.6 to 8 W
Supply Voltage:
48 V
Package:
DFN
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:Discrete Power GaN HEMT 100 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:300 W RF Power GaN Transistor for Cooking Applications
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.8 dBm
Power(W):
300 W
Gain:
15.2 dB
Supply Voltage:
50 V
more info
Description:30 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Power(W):
26.91 to 33.88 W
Supply Voltage:
27 V
Package:
GF-68
more info
Description:Discrete Power GaN HEMT 50 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:300 W RF GaN Power Transistor from 2400 to 2500 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2400 to 500 MHz
Power:
54.87 to 55.26 dBm
Power(W):
307 to 336 W
Gain:
14.9 to 15.3 dB
Supply Voltage:
50 V
Package:
4 Terminals Ceramic
more info
Description:100 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50.2 dBm
Power(W):
79.43 to 104.7 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:Discrete Power GaN HEMT 25 Watt
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 14 GHz
Gain:
9 to 19 dB
Supply Voltage:
28 V
more info
Description:36 W Doherty RF Power GaN Transistor from 1800 to 2200 MHz
Application Industry:
Cellular
Transistor Type:
FET
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.56 dBm
Power(W):
36 W
Supply Voltage:
0 to 55 Vdc
Package:
NI-400S-2S
more info

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