RF Transistors

55 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Mitsubishi Electric US, Inc., Infineon Technologies
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:SiGe:C NPN Heterojunction Bipolar Transistor
Application Industry:
SATCOM
Transistor Type:
HBT
Technology:
SiGe
Frequency:
150 MHz to 12 GHz
Power:
9 dBm
Power(W):
0.01 W
Supply Voltage:
3 V
Package:
TSLP-3-9
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:High Linearity, Low Profile Silicon NPN RF Bipolar Transistor
Transistor Type:
Bipolar
Technology:
SiGe
Power:
23.5 to 28 dBm
Package Type:
Surface Mount
Power(W):
0.22 to 0.63 W
Gain:
12.5 to 33 dB
Package:
TSFP-4-1
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Wi-Fi / Bluetooth
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Package Type:
Flanged
Power(W):
70 W
Gain:
11 dB
more info
Description:RF Heterojunction Bipolar Transistor with 45 GHz Ft
Application Industry:
SATCOM, GNSS
Transistor Type:
HBT
Technology:
SiGe
Frequency:
Up to 75 GHz
Power:
6.5 to 8 dBm
Package Type:
Flanged
Power(W):
0.0045 to 0.0063 W
Supply Voltage:
3 V
more info

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