RF Transistors

258 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers : Mitsubishi Electric US, Inc., Integra Technologies, Inc.
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1030 and 1090 MHz
Power:
65.56 dBm
Power(W):
3600 W
Gain:
18 to 22 dB
Supply Voltage:
100 V
more info
Description:30 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Power(W):
26.91 to 33.88 W
Supply Voltage:
27 V
Package:
GF-68
more info
Description:150 W CW/Pulsed GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
51.76 dBm
Power(W):
150 W
Gain:
12 to 16 dB
Supply Voltage:
28 V
more info
Description:100 W, GaN HEMT from 13.75 to 14.5 for SATCOM Earth Station
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50.2 dBm
Power(W):
79.43 to 104.7 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:850 W GaN-on-SiC Power Transistor from 400 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
400 to 450 MHz
Power:
59.29 to 60.61 dBm
Power(W):
850 to 1150 W
Gain:
19.8 to 21.8 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:1250 W GaN Power Transistor from 430 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
430 to 450 MHz
Power:
60.97 dBm
Power(W):
1250 W
Gain:
17.5 to 20 dB
Supply Voltage:
50 V
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Power(W):
70 W
Gain:
11 dB
more info
Description:250 W Power Transistor from 420 to 450 MHz for Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
23 to 25 dB
Supply Voltage:
50 V
more info