RF Transistors

66 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Mitsubishi Electric US, Inc., Advanced Semiconductor, Inc.
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:1000 W Si-Enhancement Mode Transistor from 1030 to 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Package Type:
Flanged
Power(W):
1000 W
Gain:
15.5 dB
Supply Voltage:
50 V
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:1.2 to 1.4 GHz, 25 W Transistor for Pulsed Avionics Applications
Application Industry:
Radar
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
43.98 dBm
Package Type:
Surface Mount
Power(W):
25 W
Gain:
19 to 20.5 dB
Supply Voltage:
50 V
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
Description:960 MHz to 1.21 GHz, 800 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Gain:
15.5 dB
Supply Voltage:
50 V
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:960 MHz to 1.21 GHz, 150 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.21 GHz
Power:
51.76 dBm
Package Type:
Flanged
Power(W):
150 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Package Type:
Flanged
Power(W):
70 W
Gain:
11 dB
more info
Description:1.2 to 1.4 GHz, 84 W Transistor for Pulsed Avionics Applications
Application Industry:
Aerospace & Defence
Transistor Type:
MOSFET
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
49.24 dBm
Package Type:
Flanged
Power(W):
84 W
Gain:
20.5 dB
Supply Voltage:
50 V
more info

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