RF Transistors

50 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Mitsubishi Electric US, Inc., Tagore Technology
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.50 GHz
Power:
45.3 dBm
Package Type:
Flanged
Power(W):
33.88 W
Gain:
8.5 to 9.5 dB
Supply Voltage:
24 V
more info
Description:6 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Cellular
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
40 dBm
Package Type:
Surface Mount
Power(W):
10 W
Supply Voltage:
28 to 32 V
Package:
16 Pin QFN
more info
Description:100 W GaN HEMT from 13.75 to 14.5 GHz
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
49 to 50 dBm
Package Type:
Flanged
Power(W):
79.43 to 100 W
Supply Voltage:
27 V
Package:
GF-69
more info
Description:25 W GaN Power Transistor from 30 to 4000 MHz
Application Industry:
Cellular, Military
Transistor Type:
DHEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 4 GHz
Power:
44 dBm
Power(W):
25.11 W
Gain:
17.5 dB
Supply Voltage:
32 to 34 V
Package:
8 Pin QFN
more info
Description:30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
13.75 to 14.5 GHz
Power:
44.3 to 45.3 dBm
Package Type:
Flanged
Power(W):
26.91 to 33.88 W
Supply Voltage:
24 to 27 V
Package:
GF-68
more info
Description:14 W GaN Power Transistor from 30 MHz to 2.7 GHz
Application Industry:
Cellular, Broadcast
Transistor Type:
HEMT
Technology:
GaN on Si, GaN
CW/Pulse:
CW
Frequency:
30 MHz to 2.7 GHz
Power:
41.5 dBm
Package Type:
Surface Mount
Power(W):
14.1 W
Gain:
13.5 to 18 dB
Supply Voltage:
12 to 34 V
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Package Type:
Surface Mount
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:70W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
48.3 dBm
Package Type:
Flanged
Power(W):
70 W
Gain:
11 dB
more info
Description:100W GaN HEMT for Satellite Earth Stations
Application Industry:
SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
13.75 to 14.5 GHz
Power:
50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
10 dB
more info
Description:Ka-band GaN-HEMT MMIC for Satellite Earth Stations
Application Industry:
Aerospace & Defence, SATCOM
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
27.5 to 31 GHz
Power:
39 dBm
Power(W):
8 W
Gain:
15 dB
more info

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