RF Transistors

47 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Infineon Technologies, Amcom Communications
Description:SiGe:C NPN Heterojunction Bipolar Transistor
Application Industry:
SATCOM
Transistor Type:
HBT
Technology:
SiGe
Frequency:
150 MHz to 12 GHz
Power:
9 dBm
Power(W):
0.01 W
Supply Voltage:
3 V
Package:
TSLP-3-9
more info
Description:HiFET High Voltage GaAs FET DC-12 GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
FET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 12 GHz
Power:
33 dBm
Package Type:
Flanged
Power(W):
2 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:High Linearity, Low Profile Silicon NPN RF Bipolar Transistor
Transistor Type:
Bipolar
Technology:
SiGe
Power:
23.5 to 28 dBm
Package Type:
Surface Mount
Power(W):
0.22 to 0.63 W
Gain:
12.5 to 33 dB
Package:
TSFP-4-1
more info
Description:Plastic Packaged GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
22 dBm
Package Type:
Surface Mount, PCB Mount
Power(W):
0.16 W
Supply Voltage:
5 to 7 V
Package:
plastic
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Wi-Fi / Bluetooth
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
more info
Description:High Power Rev 7 GaAs Power FET
Application Industry:
Wireless Infrastructure
Transistor Type:
MESFET
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
7 V
Package:
Ceramic
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:Ceramic Package GaAs Power pHEMT DC-8GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38 dBm
Package Type:
Flanged
Power(W):
6.31 W
Supply Voltage:
28 V
Package:
Ceramic
more info
Description:RF Heterojunction Bipolar Transistor with 45 GHz Ft
Application Industry:
SATCOM, GNSS
Transistor Type:
HBT
Technology:
SiGe
Frequency:
Up to 75 GHz
Power:
6.5 to 8 dBm
Package Type:
Flanged
Power(W):
0.0045 to 0.0063 W
Supply Voltage:
3 V
more info
Description:Ceramic Package GaN AM060WX-BI-R Power HEMT DC-15GHz
Application Industry:
Wireless Infrastructure, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 15 GHz
Power:
46.1 to 45.7 dBm (P5dB)
Package Type:
Die
Power(W):
40.74 W
Supply Voltage:
28 V
more info

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