RF Transistors - Integra Technologies, Inc.

213 RF Transistors from Integra Technologies, Inc. meet your specification.
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  • Manufacturers: Integra Technologies, Inc.
Description:50 W GaN Power Transistor from 8.9 to 9.4 GHz for X-Band Radars
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
8.9 to 9.4 GHz
Power:
49.03 dBm
Power(W):
80 W
Gain:
10 dB
Supply Voltage:
50 V
more info
Description:200 W GaN Power Transistor from 2.7 to 2.9 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2700 to 2900 MHz
Power:
53.01 dBm
Power(W):
200 W
Gain:
17 to 20 dB
Supply Voltage:
50 V
more info
Description:3600 W GaN on SiC Power Transistor from 1030 to 1090 MHz
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1030 and 1090 MHz
Power:
65.56 dBm
Power(W):
3600 W
Gain:
18 to 22 dB
Supply Voltage:
100 V
more info
Description:150 W CW/Pulsed GaN Transistor from 960 to 1215 MHz
Application Industry:
Avionics, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
960 to 1215 MHz
Power:
51.76 dBm
Power(W):
150 W
Gain:
12 to 16 dB
Supply Voltage:
28 V
more info
Description:850 W GaN-on-SiC Power Transistor from 400 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
400 to 450 MHz
Power:
59.29 to 60.61 dBm
Power(W):
850 to 1150 W
Gain:
19.8 to 21.8 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:1250 W GaN Power Transistor from 430 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
430 to 450 MHz
Power:
60.97 dBm
Power(W):
1250 W
Gain:
17.5 to 20 dB
Supply Voltage:
50 V
more info
Description:250 W Power Transistor from 420 to 450 MHz for Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
23 to 25 dB
Supply Voltage:
50 V
more info
Description:50 W GaN-on-SiC Power Transistor from 9 to 10 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
9 to 10 GHz
Power:
47 dBm
Power(W):
50 W
Gain:
10 to 12 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Power(W):
50 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flanged Ceramic
more info
Description:GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54 dBm
Power(W):
90 W
Gain:
11 dB
Supply Voltage:
50 V
more info

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