RF Transistors - Integra Technologies, Inc.

222 RF Transistors from Integra Technologies, Inc. meet your specification.
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  • Manufacturers: Integra Technologies, Inc.
Description:5 kW GaN-on-SiC Transistor for L-Band Avionics Applications
Application Industry:
Avionics
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
67 dBm
Package Type:
Flanged
Power(W):
5 kW (Min)
Gain:
18 to 22 dB
Supply Voltage:
125 V
more info
Description:400 W GaN HEMT from 2.7 to 2.9 GHz for Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 to 2.9 GHz
Power:
56 dBm
Package Type:
Flanged
Power(W):
400 W
Gain:
17 to 20 dB
Supply Voltage:
50 V
more info
Description:1.5 W, GaN on SiC HEMT from 2.7 to 2.9 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 2.9 GHz
Power:
61.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 W
Gain:
15 dB
Supply Voltage:
100 V
more info
IGN1030S3100 Image
Description:3.1 kW, GaN RF Transistor from 1 to 2 GHz
Application Industry:
Avionics
Technology:
GaN
CW/Pulse:
CW
Frequency:
1 to 2 GHz
Power:
64.91 dBm
Package Type:
2-Hole Flanged
Power(W):
3.1 kW
Supply Voltage:
75 V
more info
IGN1012S2500 Image
Description:2.5 kW, L-Band GaN Transistor for Directed Energy Applications
Application Industry:
Military
Technology:
GaN
CW/Pulse:
Pulse
Frequency:
1 to 1.2 GHz
Power:
63.98 dBm
Package Type:
2-Hole Flanged
Power(W):
2.5 kW
Gain:
17 dB
Supply Voltage:
100 V
more info
IGN1214M3200 Image
Description:1.5 kW, GaN RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Technology:
GaN
CW/Pulse:
CW
Frequency:
1.2 to 1.4 GHz
Power:
61.76 dBm
Package Type:
2-Hole Flanged
Power(W):
1.5 kW
Supply Voltage:
75 V
more info
IGN1313S3600 Image
Description:3.2 kW, GaN RF Transistor from DC to 1.3 GHz
Technology:
GaN
CW/Pulse:
CW
Frequency:
DC to 1.3 GHz
Power:
65.05 dBm
Package Type:
2-Hole Flanged
Power(W):
3.2 kW
Supply Voltage:
100 V
more info
IGW4000 Image
Description:GaN RF Transistor for Electronic Warfare
Application Industry:
Electronic Warfare
Technology:
GaN
CW/Pulse:
CW
Package Type:
2-Hole Flanged
Supply Voltage:
100 V
more info
Description:1.03 GHz GaN-on-SiC Power Transistor for Avionics Applications
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1030 MHz
Power:
65.56 dBm
Package Type:
2-Hole Flanged
Power(W):
3600 W
Gain:
18 to 22 dB
Supply Voltage:
100 V
more info
Description:50 W GaN Power Transistor from 8.9 to 9.4 GHz for X-Band Radars
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
8.9 to 9.4 GHz
Power:
49.03 dBm
Power(W):
80 W
Gain:
10 dB
Supply Voltage:
50 V
more info

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