RF Transistors - Integra Technologies, Inc.

204 RF Transistors from Integra Technologies, Inc. meet your specification.
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Description: GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54
Power(W):
90 W
Gain:
9 dB
Supply Voltage:
50 V
more info
Description: 135 Watts GaN on SiC Transistor for S-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
51.3 dBm
Power(W):
134.9 W
Gain:
13.5 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description: High Power Broadband GaN Transistor from 0.1 to 6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
0.1 to 6 GHz
Power:
40.79 dBm
Power(W):
12 W
Supply Voltage:
50 V
more info
Description: Fully-Matched GaN on SiC RF Power Transistor from 5 to 6 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
43.98 dBm
Power(W):
25 W
Supply Voltage:
36 V
more info
Description: L-Band Radar GaN on SiC Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Supply Voltage:
50 V
more info
Description: GaN on SiC 50W Transistor for C-Band Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Power(W):
50 W
Supply Voltage:
50 V
more info
Description: 2.7 to 3.1 GHz, LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
41.14 dBm
Power(W):
13 W
Gain:
11.7 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description: 2.7 to 3.1 GHz, LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
34.77 dBm
Power(W):
3 W
Gain:
11.5 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description: 2.7 to 3.1 GHz, LDMOS Transistor
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
31.76 dBm
Power(W):
1.5 W
Gain:
12.1 dB
Supply Voltage:
32 V
Package:
Ceramic
more info
Description: 1.03 GHz, LDMOS Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.03 GHz
Power:
60 to 61.14 dBm
Power(W):
1300.17 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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