RF Transistors - Integra Technologies, Inc.

208 RF Transistors from Integra Technologies, Inc. meet your specification.
Selected Filters Reset All
  • Manufacturers : Integra Technologies, Inc.
Description:1250 W GaN Power Transistor from 430 to 450 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
430 to 450 MHz
Power:
60.97 dBm
Power(W):
1250 W
Gain:
17.5 to 20 dB
Supply Voltage:
50 V
more info
Description:250 W Power Transistor from 420 to 450 MHz for Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
420 to 450 MHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
23 to 25 dB
Supply Voltage:
50 V
more info
Description:50 W GaN-on-SiC Power Transistor from 9 to 10 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
9 to 10 GHz
Power:
47 dBm
Power(W):
50 W
Gain:
10 to 12 dB
Supply Voltage:
50 V
Package:
Ceramic lid
more info
Description:5.2 to 5.9 GHz GaN HEMT Power Transistor for Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Power(W):
50 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flanged Ceramic
more info
Description:GaN on SiC Transistor X-Band Radars from 11 to 12 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
10.8 to 11.8 GHz
Power:
49.54 dBm
Power(W):
90 W
Gain:
11 dB
Supply Voltage:
50 V
more info
Description:135 Watts GaN on SiC Transistor for S-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
51.3 dBm
Power(W):
134.9 W
Gain:
13.5 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:High Power Broadband GaN Transistor from 0.1 to 6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
0.1 to 6 GHz
Power:
40.79 dBm
Power(W):
12 W
Supply Voltage:
50 V
more info
Description:Fully-Matched GaN on SiC RF Power Transistor from 5 to 6 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
5.2 to 5.9 GHz
Power:
43.98 dBm
Power(W):
25 W
Supply Voltage:
36 V
more info
Description:L-Band Radar GaN on SiC Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Supply Voltage:
50 V
more info
Description:GaN on SiC 50W Transistor for C-Band Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Power(W):
50 W
Supply Voltage:
50 V
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency (MHz)

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.