RF Transistors - Qorvo

96 RF Transistors from Qorvo meet your specification.
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  • Manufacturers : Qorvo
Description:GaN-on-SiC HEMT Transistorfrom 1.2 to 1.4 GHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
54.96 dBm(CW, at 3dB Compression), 56.7 dBm(Pulsed
Power(W):
313 W(CW, at 3dB Compression), 468 W(Pulsed
Gain:
17.5 dB(CW), 17.8 dB(Pulsed)
Supply Voltage:
45 V(CW), 50 V(Pulsed)
more info
Description:GaN-on-SiC HEMT Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
45.4 dBm(Psat)
Power(W):
34.7 W(Psat)
Gain:
17.7 to 18.8 dB (at 3dB Compression)
Supply Voltage:
48 V
Package:
20 Pin QFN Package
more info
Description:1500 W GaN RF Transistor from 1.2 to 1.4 GHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
61.76 dBm (3dB Compression)
Power(W):
1500 (3dB Compression)
Gain:
23.3 dB
Supply Voltage:
65 V
more info
Description:75 W GAN Transistor from DC to 3.6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.6 GHz
Power:
49 dBm
Power(W):
79.4 W
Gain:
3dB Compression 19.5 dB
Supply Voltage:
48 V
more info
Description:1800 Watt, GaN on SiC Discrete Transistor from 1 to 1.1 GHz
Application Industry:
Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1 to 1.1 GHz
Power:
62.7 dBm
Power(W):
1862 W
Gain:
22.5 dB
Supply Voltage:
65 V
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Gain:
17 dB
Supply Voltage:
32 V
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
36.99 dBm
Power(W):
5 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power(W):
72.44 W
Gain:
19.2 dB
Supply Voltage:
32 V
more info
Description:DC to 12 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 12 GHz
Power(W):
57.54 W
Gain:
19.3 dB
Supply Voltage:
32 V
more info
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