RF Transistors

26 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers : STMicroelectronics, BeRex, Inc.  
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.71 W
Gain:
7 to 11 dB
Supply Voltage:
8 V
more info
Description: 250 W LDMOS L-band Radar Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
14 dB
Supply Voltage:
80 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
2 W
Gain:
5.5 to 9 dB
Supply Voltage:
8 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
1.41 W
Gain:
6 to 10 dB
Supply Voltage:
8 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
1.12 W
Gain:
6.5 to 11 dB
Supply Voltage:
8 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.35 W
Gain:
8.5 to 13.5 dB
Supply Voltage:
8 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.28 W
Gain:
9 to 13.5 dB
Supply Voltage:
8 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.56 W
Gain:
7.5 to 12 dB
Supply Voltage:
8 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power(W):
3.02 W
Gain:
7.7 to 11 dB
Supply Voltage:
8 V
more info
Description: HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26 GHz
Power(W):
1.58 W
Gain:
8 to 12 dB
Supply Voltage:
8 V
more info

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