RF Transistors

61 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers : STMicroelectronics, RFHIC  
Description: GaN Power Transistors from 1030 to 1090 MHz
Application Industry:
Radar, Aerospace & Defence
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power(W):
1100 W
Supply Voltage:
50 V
more info
Description: 250 W LDMOS L-band Radar Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW, Pulse
Frequency:
1200 to 1400 MHz
Power:
53.98 dBm
Power(W):
250 W
Gain:
14 dB
Supply Voltage:
80 V
more info
Description: 580 W GaN Power Transistor from 499 to 501 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
499 to 501 MHz
Power:
57.77 to 57.85 dBm
Power(W):
598 to 609 W
Supply Voltage:
50 to 52 V
more info
Description: 570 W GaN Power Transistor from 1295 to 1305 MHz
Application Industry:
ISM, RF Energy
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
1295 to 1305 MHz
Power:
57.51 to 57.63 dBm
Power(W):
563 to 580 W
Supply Voltage:
50 V
more info
Description: 300 Watt GaN Power Transistor from 910 to 920 MHz
Application Industry:
ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
910 to 920 MHz
Power:
55.9 dBm
Power(W):
330 W
Gain:
17.1 to 18 dB
Supply Voltage:
50 V
more info
Description: GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
53.77 to 54.05 dBm
Power(W):
238.4 to 254.1 W
Gain:
13.1 to 13.8 dB
Supply Voltage:
52 Vdc
more info
Description: GaN on SiC Transistor from 2.4 to 2.5 GHz
Application Industry:
ISM
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2.4 to 2.5 GHz
Power:
54.94 to 55.56 dBm
Power(W):
312.1 to 360 W
Gain:
11.4 to 12.6 dB
Supply Voltage:
52 Vdc
more info
Description: GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
27.99 W
Gain:
18.7 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
Description: GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
27.99 W
Gain:
17.6 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description: GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
14 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info

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