RF Transistors

284 RF Transistors from Ampleon meet your specification.
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  • Manufacturers: Ampleon
  • Transistor Type: LDMOS
Description:850 W LDMOS Doherty Power Transistor from 617 to 960 MHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
617 to 960 MHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
48 V
Package:
Plastic Earless Flang 6 Leads
more info
Description:500 W HF/VHF LDMOS Transistor from 10 to 700 MHz
Application Industry:
Broadcast, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW
Frequency:
10 to 700 MHz
Power:
57 dBm
Package Type:
Flanged
Power(W):
500 W
Supply Voltage:
50 V
more info
Description:Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
Frequency:
2.3 to 2.7 GHz
Power:
48 to 49.5 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 89.12 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz
Application Industry:
Base Station, Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.8 GHz
Power:
48 to 49 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 79.4 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
Description:LDMOS Doherty MMIC from 3.4 to 3.8 GHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3800 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
7.9433 W
Gain:
31.1 to 36.1 dB
Supply Voltage:
28 V
more info
Description:430 W LDMOS Doherty Power Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2496 to 2690 MHz
Power:
56.33 dBm
Power(W):
429.54 W
Supply Voltage:
28 V
Package:
Air Cavity Plastic Earless Flanged Package 6 Leads
more info
Description:600 W LDMOS Power Transistor from 2110 to 2170 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2170 MHz
Power:
50.41 dBm
Package Type:
Flanged
Power(W):
110 W
Supply Voltage:
30 V
Package:
6 leaded flange
more info
Description:1600 W LDMOS Power Transistor from 1 to 450 MHz
Application Industry:
Broadcast, ISM, Cellular, Radar
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
1 to 450 MHz
Power:
62.04 dBm
Power(W):
1599.56 W
Supply Voltage:
50 to 55 V
more info
Description:550 W LDMOS Power Transistor from 2110 to 2180 MHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2110 to 2180 MHz
Power:
49.68 dBm
Package Type:
Flanged
Power(W):
93 W
Gain:
16.2 dB
Supply Voltage:
30 V
Package:
6 leaded flange
more info
Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.3 to 2.7 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.7 GHz
Power:
44 to 44.8 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
25.12 to 30.2 W
Supply Voltage:
28 V
more info

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