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RF Transistors

214 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Ampleon, NXP Semiconductors
  • Transistor Type: LDMOS
  • Supply Voltage : 27 to 29 V
B10G2327N55D Image
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Ampleon - B10G2327N55D

RF Transistor from Ampleon
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Description:2-Stage Asymmetrical Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Wireless Infrastructure, Cellular
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2300 to 2700 MHz
Power:
47.4 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
55 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
A2V07H400-04N Image
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NXP Semiconductors - A2V07H400-04N

RF Transistor from NXP Semiconductors
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Description:107 W LDMOS Power Transistor from 420 to 851 MHz
Application Industry:
Base Station, Cellular
Transistor Type:
LDMOS
Frequency:
420 to 692 MHz
Power:
57.3 dBm (3dB)
Power(W):
537 W (3dB)
Supply Voltage:
0 to 55 V
more info
B11G2327N70D Image
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Ampleon - B11G2327N70D

RF Transistor from Ampleon
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Description:Dual-Path 2-Stage Doherty LDMOS FET from 2.3 to 2.7 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
Frequency:
2.3 to 2.7 GHz
Power:
48 to 49.5 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 89.12 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
B11G3338N80D Image
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Ampleon - B11G3338N80D

RF Transistor from Ampleon
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Description:3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz
Application Industry:
Base Station, Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3.3 to 3.8 GHz
Power:
48 to 49 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
63 to 79.4 W (P3dB)
Supply Voltage:
28 V
Package:
PQFN
more info
B10G3438N55D Image
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Ampleon - B10G3438N55D

RF Transistor from Ampleon
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Description:LDMOS Doherty MMIC from 3.4 to 3.8 GHz
Application Industry:
Base Station
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3400 to 3800 MHz
Power:
39 dBm
Package Type:
Flanged
Power(W):
7.9433 W
Gain:
31.1 to 36.1 dB
Supply Voltage:
28 V
more info
BLC10G27XS-400AVT Image
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Ampleon - BLC10G27XS-400AVT

RF Transistor from Ampleon
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Description:430 W LDMOS Doherty Power Transistor from 2496 to 2690 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2496 to 2690 MHz
Power:
56.33 dBm
Power(W):
429.54 W
Supply Voltage:
28 V
Package:
Air Cavity Plastic Earless Flanged Package 6 Leads
more info
A3T18H400W23S Image
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NXP Semiconductors - A3T18H400W23S

RF Transistor from NXP Semiconductors
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Description:71 W RF Power LDMOS Transistor from 1805 to 1880 MHz
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS, MOSFET
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.88 GHz
Power:
48.51 dBm
Package Type:
Chip
Power(W):
71 W
Gain:
16.8 to 17 dB
Supply Voltage:
28 V
more info
BLM9D2022-08AM Image
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Ampleon - BLM9D2022-08AM

RF Transistor from Ampleon
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Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.11 to 2.17 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2.11 to 2.17 GHz
Power:
38.5 to 39.2 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.08 to 8.32 W
Supply Voltage:
28 V
more info
BLM9D3538-12AM Image
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Ampleon - BLM9D3538-12AM

RF Transistor from Ampleon
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Description:LDMOS 3-Stage Integrated Doherty MMIC Transistor from 3.4 to 3.8 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
3.4 to 3.8 GHz
Power:
39 to 40 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
7.94 to 10 W
Supply Voltage:
28 V
more info
BLM10D2327-60ABG Image
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Ampleon - BLM10D2327-60ABG

RF Transistor from Ampleon
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Description:LDMOS 2-Stage Integrated Doherty MMIC Transistor from 2.3 to 2.7 GHz
Application Industry:
Cellular, Wireless Infrastructure
Transistor Type:
LDMOS
CW/Pulse:
CW, Pulse
Frequency:
2.3 to 2.7 GHz
Power:
48.4 dBm (P3dB)
Package Type:
Surface Mount
Power(W):
69.18 W
Supply Voltage:
28 V
more info
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