RF Transistors

152 RF Transistors from 2 Manufacturers meet your specification.
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  • Manufacturers: Polyfet RF Devices, Infineon Technologies
Description:SiGe:C NPN Heterojunction Bipolar Transistor
Application Industry:
SATCOM
Transistor Type:
HBT
Technology:
SiGe
Frequency:
150 MHz to 12 GHz
Power:
9 dBm
Power(W):
0.01 W
Supply Voltage:
3 V
Package:
TSLP-3-9
more info
Description:High Linearity, Low Profile Silicon NPN RF Bipolar Transistor
Transistor Type:
Bipolar
Technology:
SiGe
Power:
23.5 to 28 dBm
Package Type:
Surface Mount
Power(W):
0.22 to 0.63 W
Gain:
12.5 to 33 dB
Package:
TSFP-4-1
more info
Description:RF Power LDMOS Transistor from 960 to 1215 MHz
Application Industry:
Avionics
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
960 MHz to 1.215 GHz
Power:
59.03 dBm
Package Type:
Flanged
Power(W):
800 W
Supply Voltage:
40 to 50 VDC
more info
Description:NPN RF Bipolar Transistor for Wireless Applications up to 6 GHz
Application Industry:
ISM, Wi-Fi / Bluetooth
Transistor Type:
Bipolar
Technology:
SiGe
Frequency:
DC to 6 GHz
more info
Description:RF Power LDMOS Transistor from 1 to 1300 MHz
Application Industry:
Broadcast
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
1 MHz to 1.3 GHz
Power:
53.98 dBm
Package Type:
Flanged
Power(W):
250 W
Supply Voltage:
28 VDC
more info
Description:Surface Mount High Linearity Silicon NPN RF Bipolar Transistor
Application Industry:
ISM
Transistor Type:
Bipolar
Technology:
SiGe
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
14.5 dBm
Package Type:
Surface Mount
Power(W):
0.03 W
Supply Voltage:
2.3 V
Package:
SOT343
more info
Description:RF Power LDMOS Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
59.29 dBm
Package Type:
Flanged
Power(W):
850 W
Supply Voltage:
40 to 50 VDC
more info
Description:RF Heterojunction Bipolar Transistor with 45 GHz Ft
Application Industry:
SATCOM, GNSS
Transistor Type:
HBT
Technology:
SiGe
Frequency:
Up to 75 GHz
Power:
6.5 to 8 dBm
Package Type:
Flanged
Power(W):
0.0045 to 0.0063 W
Supply Voltage:
3 V
more info
Description:7 W, Si LDMOS Power Transistor
Application Industry:
Aerospace & Defence, Broadcast
Transistor Type:
LDMOS
Technology:
Si
Power:
38 dBm
Package Type:
Surface Mount
Power(W):
7 W
more info
Description:RF HBT for 5GHz Applications
Application Industry:
GNSS, SATCOM, Wi-Fi / Bluetooth
Transistor Type:
Bipolar
Technology:
Si
Frequency:
Up to 85 GHz
Power:
5 dBm
Package Type:
Surface Mount
Power(W):
0.003 W
Gain:
23 dB
Supply Voltage:
1.8 V
more info

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