RF Transistors

108 RF Transistors from 10 Manufacturers meet your specification.
Selected Filters Reset All
  • Frequency: 0 to 1600 MHz (Outside this range )
  • Supply Voltage: 50 to 50 V
  • Technology: GaN on SiC, GaN
  • Transistor Type: HEMT
Description:120-W, UHF to 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
VHF to 2.5 GHz
Power:
50.79 dBm
Package Type:
Flanged
Power(W):
119.95 W
Supply Voltage:
50 V
more info
Description:1.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
1.6 GHz
Power:
47.5 dBm
Package Type:
Flanged
Power(W):
56.23 W
Supply Voltage:
50 V
more info
Description:150 W GaN Transistor from DC to 1.5 GHz
Application Industry:
Radar, Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 1.5 GHz
Power:
51.14 dBm
Package Type:
Flanged
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:DC to 1.7 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 1.7 GHz
Power:
56.99 dBm
Package Type:
Surface Mount
Power(W):
500.03 W
Gain:
23.9 dB
Supply Voltage:
32 to 55 V
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 to 58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.79 to 52.5 dBm
Package Type:
Flanged
Power(W):
177.83 W
Gain:
18.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 19 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
47.78 to 50 dBm
Package Type:
Flanged
Power(W):
100 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 to 59.29 dBm
Package Type:
Flanged
Power(W):
849.18 W
Gain:
12.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 17.8 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 to 56.54 dBm
Package Type:
Flanged
Power(W):
450.82 W
Gain:
15.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
55.8 to 56.02 dBm
Package Type:
Flanged
Power(W):
399.94 W
Gain:
19.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 14.5 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 to 58.45 dBm
Package Type:
Flanged
Power(W):
699.84 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

FiltersReset All

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency

 
 
Apply

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Package Type