RF Transistors

8 RF Transistors from NXP Semiconductors meet your specification.
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  • Frequency : 0 to 175 MHz
  • Supply Voltage : 12.5 to 12.5 V
  • Technology : Si
  • Transistor Type : LDMOS
  • Manufacturers : NXP Semiconductors
Description:Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 50 W, 12.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
175 MHz
Power:
46.99 dBm
Power(W):
50 W
Supply Voltage:
12.5 V
Package:
CASE 1264-10, STYLE 1 TO-272-6 WRAP PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 50 W, 12.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
175 MHz
Power:
46.99 dBm
Power(W):
50 W
Supply Voltage:
12.5 V
Package:
CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 470 MHz, 70 W, 12.5 V
Application Industry:
ISM
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
470 MHz
Power:
48.45 dBm
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
CASE 1366-05, STYLE 1 TO-272-8 WRAP PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 470 MHz, 70 W, 12.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
470 MHz
Power:
48.45 dBm
Power(W):
69.98 W
Supply Voltage:
12.5 V
Package:
CASE 1366A-03, STYLE 1 TO-272-8 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
45.44 dBm
Power(W):
34.99 W
Supply Voltage:
12.5 V
Package:
CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
45.44 dBm
Power(W):
34.99 W
Supply Voltage:
12.5 V
Package:
CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 12.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
39.03 dBm
Power(W):
8 W
Supply Voltage:
12.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
CW
Frequency:
520 MHz
Power:
34.77 dBm
Power(W):
3 W
Supply Voltage:
12.5 V
Package:
CASE 466-03, STYLE 1 PLD-1.5
more info

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