RF Transistors

5 RF Transistors from NXP Semiconductors meet your specification.
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  • Frequency : 0 to 175 MHz
  • Technology : Si
  • Transistor Type : LDMOS
  • Manufacturers : NXP Semiconductors
  • Supply Voltage : 27 to 29 V
Description:LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 36526 MHz, 4 W, 28 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 MHz to 2 GHz
Power:
36.02 dBm
Power(W):
4 W
Supply Voltage:
28 V
Package:
PLD--1.5 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
Description:Lateral N-Channel RF Power MOSFET, 36526 MHz, 4 W, 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
36.02 dBm
Power(W):
4 W
Supply Voltage:
28 V
Package:
CASE 466-03, STYLE 1 PLD 1.5 PLASTIC
more info
Description:RF Power LDMOS Transistor for Consumer and Commercial Cooking, 2450 MHz, 190 W CW, 28 V
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
2.45 GHz
Power:
52.79 dBm
Power(W):
190.11 W
Supply Voltage:
28 V
Package:
NI--1230H--4S
more info

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