RF Transistors

76 RF Transistors from 8 Manufacturers meet your specification.
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  • Frequency : 0 to 2600 MHz  
  • Supply Voltage : 50 to 50 V  
  • Technology : GaN on SiC  
  • Transistor Type : HEMT  
Description: 120-W, UHF to 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
VHF to 2.5 GHz
Power:
50.79 dBm
Power(W):
119.95 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
42 dBm
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
42 dBm
Power(W):
15.85 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
50.5 dBm
Power(W):
112.2 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
45.8 dBm
Power(W):
38.02 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
50 dBm
Power(W):
100 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
45.8 dBm
Power(W):
38.02 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
47.3 dBm
Power(W):
53.7 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
44 dBm
Power(W):
25.12 W
Supply Voltage:
50 V
more info
Description: 2.6 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.6 GHz
Power:
49.5 dBm
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description: 2.65 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.65 GHz
Power:
49.5 dBm
Power(W):
89.13 W
Supply Voltage:
50 V
more info

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