RF Transistors

51 RF Transistors from 8 Manufacturers meet your specification.
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  • Frequency : 0 to 3700 MHz
  • Supply Voltage : 50 to 50 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power(W):
72.44 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, 48 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.7 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
20 dB
Supply Voltage:
12 to 55 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 3.7 GHz
Power:
38 dBm
Power(W):
6.31 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Power(W):
8.91 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Power(W):
8.91 W
Supply Voltage:
50 V
more info
Description:3.3 to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.3 to 3.7 GHz
Power:
42.5 dBm
Power(W):
17.78 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Power(W):
12.59 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, 48 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.7 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
20 dB
Supply Voltage:
12 to 55 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Power(W):
12.59 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 3.7 GHz
Power:
38 dBm
Power(W):
6.31 W
Supply Voltage:
50 V
more info
Description:3.5 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
3.5 GHz
Power:
45.8 dBm
Power(W):
38.02 W
Supply Voltage:
50 V
more info

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