RF Transistors

48 RF Transistors from 8 Manufacturers meet your specification.
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  • Frequency: 0 to 4000 MHz (Outside this range )
  • Supply Voltage: 50 to 50 V
  • Technology: GaN on SiC, GaN
  • Transistor Type: HEMT
Description:50 W, DC - 4.0 GHz, 50 V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power(W):
72.44 W
Supply Voltage:
50 V
more info
Description:15 to 20 W, GaN HEMT Transistor form DC to 4 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Supply Voltage:
50 V
more info
Description:1 to 4 GHz, 40.4 to 41 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 dBm
Power(W):
10 W
Gain:
24.7 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
46.53 dBm
Power(W):
44.98 W
Gain:
22.3 dB
Supply Voltage:
48 to 55 V
Package:
4.0 x 3.0 mm
more info
Description:17 W GaN RF Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
24 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
39.5 dBm
Power(W):
8.91 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, 48 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.7 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
20 dB
Supply Voltage:
12 to 55 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
38 dBm
Power(W):
6.31 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Power(W):
12.59 W
Supply Voltage:
50 V
more info
Description:DC to 3.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
DC to 3.7 GHz
Power:
41 dBm
Power(W):
12.59 W
Supply Voltage:
50 V
more info

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