RF Transistors

14 RF Transistors from Wolfspeed, A Cree Company meet your specification.
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  • Frequency : 0 to 6000 MHz
  • Supply Voltage : 28 to 28 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
  • Manufacturers : Wolfspeed, A Cree Company
Description:30 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Supply Voltage:
28 V
more info
Description:60 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Supply Voltage:
28 V
more info
Description:25-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Supply Voltage:
28 V
more info
Description:10 W, DC - 6 GHz, RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
40 to 40.97 dBm
Power(W):
12.5 W
Supply Voltage:
28 V
more info
Description:6 W RF Power GaN HEMT in a Plastic Package
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 6 GHz
Power:
38.39 dBm
Power(W):
6.9 W
Supply Voltage:
28 V
more info
Description:10 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
42.3 dBm
Power(W):
17 W
Supply Voltage:
28 V
more info
Description:6-W RF Power GaN HEMT
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
38.45 to 39.54 dBm
Power(W):
8.99 W
Supply Voltage:
28 V
more info
Description:25 W GaN HEMT from DC to 6 GHz
Application Industry:
Wireless Infrastructure, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 6 GHz
Power:
40 to 44.77 dBm
Power(W):
20 to 30 W
Supply Voltage:
28 V
more info
Description:8 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Supply Voltage:
28 V
more info
Description:15 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Supply Voltage:
28 V
more info

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