RF Transistors

34 RF Transistors from 3 Manufacturers meet your specification.
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  • Frequency : 0 to 6000 MHz
  • Supply Voltage : 48 to 48 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
14 W
Gain:
17.5 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
27.99 W
Gain:
17.6 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:45 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Cellular, Wireless Infrastructure, Test & Measurem...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
46.53 dBm
Power(W):
45 W
Supply Voltage:
48 V
more info
Description:20 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Radar, Cellular, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Supply Voltage:
48 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
54.95 W
Gain:
15.7 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:GaN-on-SiC HEMT Transistor from DC to 6 GHz
Application Industry:
Aerospace & Defence, Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
45.4 dBm(Psat)
Power(W):
34.7 W(Psat)
Gain:
17.7 to 18.8 dB (at 3dB Compression)
Supply Voltage:
48 V
Package:
20 Pin QFN Package
more info
Description:25 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Power:
43.98 dBm
Power(W):
25 W
Supply Voltage:
48 V
Package:
680B
more info
Description:25 to 26 W, GaN HEMT Transistor from DC to 6 GHz
Application Industry:
Test & Measurement, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Supply Voltage:
48 V
Package:
680B
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
27.99 W
Gain:
18.7 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
14 W
Gain:
18.5 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info

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