RF Transistors

9 RF Transistors from 2 Manufacturers meet your specification.
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  • Frequency : 0 to 6000 MHz
  • Supply Voltage : 50 to 50 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
  • Manufacturers : United Monolithic Semiconductors, Wolfspeed, A Cree Company
Description:170-W, 6.0-GHz, 50-V GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
169.82 W
Supply Voltage:
50 V
more info
Description:DC to 6 GHz Low Noise GaN on SiC HEMT
Application Industry:
Radar, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
18 to 20 dB
Supply Voltage:
50 V
more info
Description:40-W, 6.0-GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power(W):
39.99 W
Supply Voltage:
50 V
more info
Description:30-W, 5500 to 5800-MHz, 28-V, GaN HEMT for WiMAX
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.02 dBm
Power(W):
4 W
Supply Voltage:
50 V
more info
Description:75 W, 6.0 GHz, GaN HEMT Die
Application Industry:
Test & Measurement, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power(W):
74.99 W
Supply Voltage:
50 V
more info
Description:30-W, DC to 6-GHz, 50-V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
44.77 to 45.44 dBm
Power(W):
34.99 W
Supply Voltage:
50 V
more info
Description:30 W, DC - 6.0 GHz, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 6 GHz
Power:
43 to 44 dBm
Power(W):
25.12 W
Supply Voltage:
50 V
more info
Description:30-W, DC to 6.0 GHz, GaN HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Supply Voltage:
50 V
Package:
DFN
more info
Description:20 W, GaN HEMT Transistor form DC to 6 GHz
Application Industry:
Cellular, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 6 GHz
Supply Voltage:
50 V
more info

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