RF Transistors

100 RF Transistors from 9 Manufacturers meet your specification.
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  • Frequency : 1.20000004768372 to 1400 MHz
  • Supply Voltage : 50 to 50 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:120-W, UHF to 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
VHF to 2.5 GHz
Power:
50.79 dBm
Power(W):
119.95 W
Supply Voltage:
50 V
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.13 to 59.29 dBm
Power(W):
849.18 W
Gain:
12.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 19 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
47.78 to 50 dBm
Power(W):
100 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 14.5 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 to 58.45 dBm
Power(W):
699.84 W
Gain:
14 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
18 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1200 to 1400 MHz, 17.8 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
53.98 to 56.54 dBm
Power(W):
450.82 W
Gain:
15.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
55.8 to 56.02 dBm
Power(W):
399.94 W
Gain:
19.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 to 58.45 dBm
Power(W):
699.84 W
Gain:
17 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
40.79 to 42.55 dBm
Power(W):
17.99 W
Gain:
16.3 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.2 to 1.4 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
50.79 to 52.5 dBm
Power(W):
177.83 W
Gain:
18.5 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:150 W GaN Transistor from DC to 1.5 GHz
Application Industry:
Radar, Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
DC to 1.5 GHz
Supply Voltage:
50 V
Package:
Ceramic
more info

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