RF Transistors

18 RF Transistors from 1 Manufacturer meet your specification.
Selected Filters Reset All
  • Frequency : 1000 to 26500 MHz
  • Supply Voltage : 8 to 8 V
  • Technology : GaAs
  • Transistor Type : pHEMT
Description:HIGH EFFICIENCY pHEMT POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1 to 26.5 GHz
Power(W):
0.79 W
Gain:
8 to 13.5 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
1 to 27.5 GHz
Power(W):
1 W
Gain:
8.5 to 13 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1200µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
1.12 W
Gain:
6.5 to 11 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.35 W
Gain:
8.5 to 13.5 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 800µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.71 W
Gain:
7 to 11 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 600µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.56 W
Gain:
7.5 to 12 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 300µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.28 W
Gain:
9 to 13.5 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 200µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
0.16 W
Gain:
9.5 to 14 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 1600µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
1.41 W
Gain:
6 to 10 dB
Supply Voltage:
8 V
more info
Description:HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.25µm x 2400µm)
Application Industry:
Test & Measurement, Aerospace & Defence
Transistor Type:
pHEMT
Technology:
GaAs
CW/Pulse:
CW
Frequency:
DC to 26.5 GHz
Power(W):
2 W
Gain:
5.5 to 9 dB
Supply Voltage:
8 V
more info

FiltersReset All

Manufacturers

Application Industry

Transistor Type

Technology

CW/Pulse

Frequency (MHz)

Power (dBm)

Apply

Power(W)

Apply

Gain (dB)

Apply

Supply Voltage (V)

Need Help Finding a Product?

Need Help?

Let us know what you need, we can help find products that meet your requirement.