RF Transistors

152 RF Transistors from 9 Manufacturers meet your specification.
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  • Frequency : 1030 to 1090 MHz
  • Supply Voltage : 50 to 50 V
  • Technology : GaN on SiC, GaN
  • Transistor Type : HEMT
Description:890 W GaN on SiC HEMT from 960 to 1215 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
960 to 1215 MHz
Power:
58.45 dBm
Power(W):
700 W
Gain:
20 dB
Supply Voltage:
50 V
more info
Description:L-Band Radar Transistor from 1.03 to 1.09 GHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
0 to 50.79 dBm
Power(W):
120 W
Gain:
20 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1000 Watts, 50 Volts, ELM L-Band Avionics 1030/1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
60 dBm
Power(W):
1000 W
Supply Voltage:
50 V
Package:
55-Q03
more info
Description:30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
44.77 to 45.44 dBm
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:750 Watts - 50 Volts, ELM L-Band Avionics 1030 - 1090 MHz
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.03 to 1.09 GHz
Power:
58.75 to 59.03 dBm
Power(W):
799.83 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:30 Watts, 50 Volts, 128µs, 10% 1030-1090MHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.03 to 1.09 GHz
Power:
44.77 to 45.44 dBm
Power(W):
34.99 W
Supply Voltage:
50 V
Package:
55-78030
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
57.78 dBm
Power(W):
599.79 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
59.03 dBm
Power(W):
799.83 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
56.02 dBm
Power(W):
399.94 W
Gain:
16 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
48.45 dBm
Power(W):
69.98 W
Gain:
22 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:1.030 to 1.090 GHz, HEMT Transistor
Application Industry:
Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.030 to 1.090 GHz
Power:
47.78 dBm
Power(W):
59.98 W
Gain:
19 dB
Supply Voltage:
50 V
Package:
Ceramic
more info

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