RF Transistors

135 RF Transistors from 10 Manufacturers meet your specification.
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  • Frequency: 1200 to 1400 MHz (Outside this range )
  • Supply Voltage : 50 to 50 V
  • Technology: GaN on SiC, GaN
  • Transistor Type: HEMT
Description:800-W, 1200 to 1400-MHz, GaN HEMT for L-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
58.75 to 59.6 dBm
Package Type:
Flanged
Power(W):
912.01 W
Supply Voltage:
50 V
more info
Description:GaN-on-SiC HEMT Transistorfrom 1.2 to 1.4 GHz
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
1.2 to 1.4 GHz
Power:
54.96 dBm(CW, at 3dB Compression), 56.7 dBm(Pulsed
Package Type:
Ceramic
Power(W):
313 W(CW, at 3dB Compression), 468 W(Pulsed
Gain:
17.5 dB(CW), 17.8 dB(Pulsed)
Supply Voltage:
45 V(CW), 50 V(Pulsed)
more info
Description:15 Watts, 50 Volts, 4.5mS, 35% 1200 to 1400MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-QQP
more info
Description:600 Watts - 50 Volts, 300 us, 10% Broad Band 1200 - 1400 MHz
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
57.78 dBm
Package Type:
Die
Power(W):
599.79 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.02 dBm
Package Type:
Die
Power(W):
399.94 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:280 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
54.47 dBm
Package Type:
Die
Power(W):
279.9 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:180 Watts - 50 Volts, 3ms, 30% Broad Band 1200 - 1400 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
52.55 dBm
Package Type:
Die
Power(W):
179.89 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:550 Watts - 50 Volts, 300 us, 10% Broad Band 1200 - 1400 MHz\
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
57.4 dBm
Package Type:
Die
Power(W):
549.54 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:E-Series GaN Transistor Driver
Application Industry:
Aerospace & Defence, Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
46.99 to 47.63 dBm
Package Type:
Die
Power(W):
57.94 W
Supply Voltage:
50 V
Package:
55-QQ
more info
Description:L-Band Radar GaN on SiC Transistor from 1.2 to 1.4 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
56.99 dBm
Package Type:
Flanged
Power(W):
500.03 W
Supply Voltage:
50 V
more info
Description:15 Watts, 50 Volts, 4.5mS, 35% 1200 to 1400MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
1.2 to 1.4 GHz
Power:
41.76 to 42.79 dBm
Package Type:
Die
Power(W):
19.01 W
Supply Voltage:
50 V
Package:
55-78030
more info

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