RF Transistors

17 RF Transistors from NXP Semiconductors meet your specification.
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  • Frequency : 1800 to 2000 MHz
  • Supply Voltage : 28 to 28 V
  • Technology : Si
  • Transistor Type : LDMOS
  • Manufacturers : NXP Semiconductors
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995 MHz, 32 W AVG. 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
45.05 dBm
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780GS--2L2LA
more info
Description:Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.995 GHz
Power:
42.55 dBm
Power(W):
17.99 W
Supply Voltage:
28 V
Package:
NI--780S--4L4S
more info
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-1995 MHz, 32 W AVG. 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 1.99 GHz
Power:
45.05 dBm
Power(W):
31.99 W
Supply Voltage:
28 V
Package:
NI--780S--2L2LA
more info
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
40.79 dBm
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
TO--270WB--15 PLASTIC
more info
Description:AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V
Application Industry:
Wireless Infrastructure
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
40.79 dBm
Power(W):
11.99 W
Supply Voltage:
28 V
Package:
TO--270WBG--15 PLASTIC
more info
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info
Description:GSM/GSM EDGE, SINGLE N-CDMA, 2 x W-CDMA Lateral N-Channel RF Power MOSFET, 1600-2200 MHz, 10 W, 28
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1.6 to 2.2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270--2 PLASTIC
more info
Description:728 to 2700 MHz RF Transistor for Consumer and Commercial Cooking
Application Industry:
ISM, RF Energy
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
728 MHz to 2.7 GHz
Power:
31 to 31 dBm
Power(W):
1.26 W
Supply Voltage:
28 V
Package:
PLD--1.5W PLASTIC
more info
Description:LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 36526 MHz, 4 W, 28 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse
Frequency:
1 MHz to 2 GHz
Power:
36.02 dBm
Power(W):
4 W
Supply Voltage:
28 V
Package:
PLD--1.5 PLASTIC
more info
Description:Lateral N-Channel Broadband RF Power MOSFET, 450-1500 MHz, 10 W, 28 V
Application Industry:
Aerospace & Defence
Transistor Type:
LDMOS
Technology:
Si
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2 GHz
Power:
40 dBm
Power(W):
10 W
Supply Voltage:
28 V
Package:
TO--270G--2 PLASTIC
more info

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