RF Transistors

68 RF Transistors from 4 Manufacturers meet your specification.
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  • Frequency : 1800 to 2200 MHz  
  • Supply Voltage : 48 to 48 V  
  • Technology : GaN on SiC  
  • Transistor Type : HEMT  
Description: 1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
56.02 dBm
Power(W):
399.94 W
Gain:
19.1 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description: AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.2 GHz
Power:
45.05 dBm
Power(W):
31.99 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description: 1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1.8 to 2.2 GHz
Power:
45.5 dBm
Power(W):
35.48 W
Gain:
15 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description: 1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1.8 to 2.2 GHz
Power:
44 dBm
Power(W):
25.12 W
Gain:
14.5 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description: 1.8 to 2.2 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.8 to 2.2 GHz
Power:
54.77 dBm
Power(W):
299.92 W
Gain:
21 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description: AIRFAST RF Power GaN Transistor, 2300-2690 MHz, 60 W AVG., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.805 to 2.2 GHz
Power:
46.81 dBm
Power(W):
47.97 W
Supply Voltage:
48 V
Package:
NI--400S--2S
more info
Description: GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1.82 to 2.18 GHz
Power(W):
218.78 W
Gain:
16.6 dB
Supply Voltage:
48 V
Package:
RF12001KR3
more info
Description: 1.8 to 2.4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1.8 to 2.4 GHz
Power:
53.42 dBm
Power(W):
219.79 W
Gain:
24 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description: 2.62 to 2.69 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.62 to 2.69 GHz
Power:
53.01 dBm
Power(W):
199.99 W
Gain:
23 dB
Supply Voltage:
48 V
Package:
Ceramic
more info
Description: DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info

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