RF Transistors

69 RF Transistors from 9 Manufacturers meet your specification.
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  • Frequency : 2400 to 2700 MHz
  • Supply Voltage : 50 to 50 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:15 W, DC - 6.0 GHz, 50 V, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.4 to 2.7 GHz
Power:
41.9 dBm
Power(W):
15.49 W
Supply Voltage:
50 V
more info
Description:120-W, 2300 to 2700-MHz, GaN HEMT for WiMAX and LTE
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.3 to 2.7 GHz
Power(W):
129.72 W
Supply Voltage:
50 V
more info
Description:100 W, GaN on SiC Power Transistor from 1 to 3 GHz
Application Industry:
Aerospace & Defence, Electronic Warfare
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1 to 3 GHz
Supply Voltage:
50 V
more info
Description:8 W GaN MMIC for Power Amplifiers from 0.5 to 2.7 GHz
Application Industry:
ISM, Radar, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
500 to 2700 MHz
Power:
38.2 to 39.59 dBm
Power(W):
6.6 to 9.1
Supply Voltage:
50 V
Package:
6 leaded flange
more info
Description:WIDEBAND RF POWER GaN ON SiC TRANSISTOR, 292196 MHz, 125 W CW, 50 V
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Rada...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
1 MHz to 2.7 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Supply Voltage:
50 V
Package:
NI--360H--2SB
more info
Description:DC to 2.7 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
DC to 2.7 GHz
Power:
43 dBm
Power(W):
19.95 W
Supply Voltage:
50 V
more info
Description:60-W, DC to 2700-MHz, 50-V, GaN HEMT for LTE and Pulse-Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 2.7 GHz
Power(W):
79.98 W
Supply Voltage:
50 V
more info
Description:2.7 GHz, 15 to 16 dB Gain GaN on SiC HEMT
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.7 GHz
Power:
45.5 to 46.5 dBm
Power(W):
35.48 to 44.66 W
Gain:
15 to 16 dB
Supply Voltage:
50 V
more info
Description:2.65 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.65 GHz
Power:
49.5 dBm
Power(W):
89.13 W
Supply Voltage:
50 V
more info
Description:2.65 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
Frequency:
2.65 GHz
Power:
50.5 dBm
Power(W):
112.2 W
Supply Voltage:
50 V
more info

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