RF Transistors

80 RF Transistors from 6 Manufacturers meet your specification.
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  • Frequency : 2620 to 2690 MHz
  • Supply Voltage : 48 to 48 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power(W):
164.82 W
Gain:
16.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:Thermally-Enhanced High Power RF GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.77 dBm (P3dB)
Power(W):
300 W (P3dB)
Gain:
16 to 18 dB
Supply Voltage:
48 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power(W):
218.78 W
Gain:
17 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power(W):
330.37 W
Gain:
14.2 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:170 W GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
52.3 dBm (P3dB), 52.55 dBm (CW)
Power(W):
170 W (P3dB), 180 W (CW)
Gain:
15 to 16.8 dB
Supply Voltage:
0 to 50 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power(W):
388.15 W
Gain:
13.8 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:270 W GaN on SiC HEMT from 2620 to 2690 MHz
Application Industry:
Cellular
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.62 to 2.69 GHz
Power:
54.31 dBm
Power(W):
270 W
Gain:
16.5 to 18.1 dB
Supply Voltage:
48 V
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.62 to 2.69 GHz
Power(W):
330.37 W
Gain:
15.4 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
2.5 to 2.69 GHz
Power(W):
109.9 W
Gain:
19.1 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:Airfast RF Power GaN Transistor, 2496-2690 MHz, 50 W Avg., 48 V
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
2.49 to 2.69 GHz
Power:
46.99 dBm
Power(W):
50 W
Supply Voltage:
48 V
Package:
NI--780S--4L
more info

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