RF Transistors

232 RF Transistors from 13 Manufacturers meet your specification.
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  • Frequency : 2700 to 3100 MHz
  • Supply Voltage : 28 to 55 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
27.99 W
Gain:
17.6 dB
Supply Voltage:
48 V
Package:
NS-CS01
more info
Description:130 Watts GaN on SiC Transistor for S-Band Radar Applications
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
51.14 dBm
Power(W):
130.02 W
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:240-W, 2700 to 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power(W):
249.46 W
Supply Voltage:
50 V
more info
Description:280 Watts, 50 Volts, 200 us, 20% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
54.47 to 55.25 dBm
Power(W):
334.97 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description:500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
56.75 to 57.99 dBm
Power(W):
629.51 W
Supply Voltage:
50 V
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
49.03 dBm
Power(W):
79.98 W
Gain:
13.5 dB
Supply Voltage:
40 V
Package:
Ceramic
more info
Description:2700 to 3100 MHz, 15 dB GaN Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
53.01 dBm
Power(W):
199.99 W
Gain:
13.5 dB
Supply Voltage:
44 V
Package:
Ceramic
more info
Description:Class-AB GaN-on-SiC HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
50.79 to 51.61 dBm
Power(W):
144.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
51.14 to 51.3 dBm
Power(W):
134.9 W
Gain:
14.8 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:200 W GaN Transistor from 2.7 to 3.1 GHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
53.01 dBm
Power(W):
199.99 W
Gain:
14 dB
Supply Voltage:
46 V
Package:
Ceramic
more info
Description:2.7 to 3.1 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
56.99 dBm
Power(W):
500.03 W
Gain:
17.7 dB
Supply Voltage:
28 to 55 V
Package:
17.4 x 24 x 4.3 mm
more info
Description:180 W GaN on SiC HEMT from 2700 to 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW, Pulse
Frequency:
2700 to 3100 MHz
Power:
52.55 dBm
Power(W):
180 W
Gain:
15 dB
Supply Voltage:
50 V
more info

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