RF Transistors

10 RF Transistors from 2 Manufacturers meet your specification.
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  • Frequency : 2900 to 3150 MHz
  • Supply Voltage : 45 to 45 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:2.90 to 3.15 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.90 to 3.15 GHz
Power:
48.75 to 53.01 dBm
Power(W):
199.99 W
Gain:
13.3 dB
Supply Voltage:
45 V
Package:
Ceramic
more info
Description:2.9 to 3.3 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.9 to 3.3 GHz
Power:
56.99 dBm
Power(W):
500.03 W
Gain:
15.5 dB
Supply Voltage:
28 to 55 V
more info
Description:2.7 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Gain:
18.4 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:DC to 3.2 GHz, 51 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.2 GHz
Power:
50.97 dBm
Power(W):
125.03 W
Gain:
17.5 dB
Supply Voltage:
12 to 55 V
more info
Description:100 Watt GaN on SiC HEMT from DC to 3.5 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
50 dBm
Power(W):
100 W
Gain:
17.4 dB
Supply Voltage:
12 to 60 V
more info
Description:DC to 3.7 GHz, 48 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.7 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
20 dB
Supply Voltage:
12 to 55 V
more info
Description:DC to 3.7 GHz, 48 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.7 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
20 dB
Supply Voltage:
12 to 55 V
more info
Description:1 to 4 GHz, 40.4 to 41 dBm Gan Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 dBm
Power(W):
10 W
Gain:
24.7 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
more info
Description:17 W GaN RF Transistor from DC to 4 GHz
Application Industry:
Wireless Infrastructure, Radar, Aerospace & Defenc...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
24 dB
Supply Voltage:
12 to 60 V
Package:
3 x 3 mm
more info

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