RF Transistors

64 RF Transistors from 10 Manufacturers meet your specification.
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  • Frequency: 2900 to 3500 MHz (Outside this range )
  • Supply Voltage: 50 to 50 V
  • Technology: GaN on SiC, GaN
  • Transistor Type: HEMT
Description:150 W, 2900 - 3500 MHz, 50V, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
50 to 52.3 dBm
Power(W):
169.82 W
Supply Voltage:
50 V
more info
Description:500 W GaN HEMT from 2.9 to 3.5 GHz for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
57.1 dBm
Power(W):
512.86 W
Supply Voltage:
50 V
more info
Description:400-W, 2900 to 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
56.13 to 57.28 dBm
Power(W):
534.56 W
Supply Voltage:
50 V
more info
Description:2.7 to 3.5 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse
Frequency:
2.7 to 3.5 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Gain:
18.4 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info
Description:65 W, GaN HEMT Transistor form 2.7 to 3.4 GHz
Application Industry:
Cellular, Radar, Military, Commercial
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.7 to 3.4 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
16 dB
Supply Voltage:
50 V
more info
Description:5 W S-Band GaN HEMT from 2.5 to 3.8 GHz
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW, Pulse
Frequency:
2.5 to 3.8 GHz
Power:
35.5 to 37 dBm (Psat)
Power(W):
3.54 to 5.01 W (Psat)
Gain:
17 to 18 dB
Supply Voltage:
50 V
more info
Description:60 W, GaN on SiC Power Transistor from 2.5 to 4 GHz
Application Industry:
Aerospace & Defence, Electronic Warfare
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
2.5 to 4 GHz
Power:
47.78 dBm
Power(W):
59.98 W
Supply Voltage:
50 V
more info
Description:50 W, GaN on SiC Power Transistor from 1 to 4 GHz
Application Industry:
Aerospace & Defence, Electronic Warfare
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
CW
Frequency:
1 to 4 GHz
Power:
46.98 dBm
Power(W):
49.89 W
Supply Voltage:
50 V
more info
Description:DC to 3.5 GHz, Broadband RF power GaN HEMT
Application Industry:
ISM, Wireless Infrastructure, Radar, Aerospace & D...
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
CW/Pulse:
Pulse, CW
Frequency:
DC to 3.5 GHz
Power:
53.01 dBm
Power(W):
199.99 W
Supply Voltage:
50 V
Package:
SOT1228B
more info
Description:3.5 GHz, Gain GaN on SiC HEMT
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC, GaN
Frequency:
3.5 GHz
Power:
42 dBm
Power(W):
15.85 W
Supply Voltage:
50 V
more info

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