RF Transistors

11 RF Transistors from 2 Manufacturers meet your specification.
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  • Frequency : 3300 to 3800 MHz
  • Supply Voltage : 28 to 28 V
  • Technology : GaN on Si
  • Transistor Type : HEMT
Description:45 W GaN HEMT from DC to 8 GHz
Application Industry:
Cellular, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
DC to 8000 GHz
Supply Voltage:
28 V
more info
Description:Gallium Nitride 28V, 18W RF Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse, CW
Frequency:
3.3 to 3.8 GHz
Power:
42.55 dBm
Power(W):
17.99 W
Gain:
11 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:3.3 to 3.8 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse, CW
Frequency:
3.3 to 3.8 GHz
Power:
48.13 dBm
Power(W):
65.01 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
ISM
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
43.98 dBm
Power(W):
25 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
43.98 dBm
Power(W):
25 W
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:Gallium Nitride 28V, 25W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
DC to 4 GHz
Power:
40 to 43.97 dBm
Power(W):
24.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:45 Watt GaN on Silicon RF Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW, Pulse
Frequency:
DC to 4 GHz
Power:
46.53 dBm (p3dB)
Power(W):
44.98 W (p3dB)
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:Gallium Nitride 28V, 25W RF Power Transistor
Application Industry:
Wireless Infrastructure, Aerospace & Defence, Broa...
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
40 to 43.97 dBm
Power(W):
24.95 W
Gain:
13 dB
Supply Voltage:
28 V
Package:
Flange Ceramic
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence,...
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
36.99 dBm
Power(W):
5 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:Gallium Nitride 28V, 5W RF Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
Pulse, CW
Frequency:
DC to 6 GHz
Power:
36.99 dBm
Power(W):
5 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
SOIC8NE
more info
Description:DC to 6 GHz, HEMT Transistor
Application Industry:
ISM, Wireless Infrastructure, Aerospace & Defence
Transistor Type:
HEMT
Technology:
GaN on Si
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power:
36.02 dBm
Power(W):
4 W
Gain:
17 dB
Supply Voltage:
28 V
Package:
4mm PQFN-24LD
more info

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