RF Transistors

29 RF Transistors from 5 Manufacturers meet your specification.
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  • Frequency : 5500 to 5800 MHz
  • Supply Voltage : 50 to 50 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:15-W, 5500 to 5800-MHz, GaN HEMT for WiMAX
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
5.5 to 5.8 GHz
Power:
33.01 dBm
Power(W):
2 W
Supply Voltage:
50 V
more info
Description:350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
54.8 to 56.98 dBm
Power(W):
498.88 W
Supply Voltage:
50 V
more info
Description:5.2 to 5.9 GHz, HEMT Transistor
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
49.03 dBm
Power(W):
79.98 W
Gain:
13 dB
Supply Voltage:
50 V
Package:
Ceramic
more info
Description:GaN on SiC 50W Transistor for C-Band Pulsed Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
5.2 to 5.9 GHz
Power:
47 dBm
Power(W):
50 W
Supply Voltage:
50 V
more info
Description:70-W, 4500 to 5900-MHz, internally matched GaN HEMT for C-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
4.5 to 5.9 GHz
Power:
48.81 to 50 dBm
Power(W):
100 W
Supply Voltage:
50 V
more info
Description:25-W, C-band, Unmatched, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
4.5 to 6 GHz
Power(W):
29.99 W
Supply Voltage:
50 V
more info
Description:10 W, C-band, Unmatched, GaN HEMT
Application Industry:
Aerospace & Defence, Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
4.5 to 6 GHz
Power:
40 to 40.97 dBm
Power(W):
12.5 W
Supply Voltage:
50 V
more info
Description:25 W, GaN on SiC Power Transistor from 3 to 6 GHz
Application Industry:
Aerospace & Defence, Electronic Warfare
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
3 to 6 GHz
Supply Voltage:
50 V
more info
Description:40 W, GaN on SiC Power Transistor from 1 to 6 GHz
Application Industry:
Aerospace & Defence, Electronic Warfare
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
1 to 6 GHz
Supply Voltage:
50 V
more info
Description:High Power Broadband GaN Transistor from 0.1 to 6 GHz
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
0.1 to 6 GHz
Power:
40.79 dBm
Power(W):
12 W
Supply Voltage:
50 V
more info

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