RF Transistors

71 RF Transistors from 3 Manufacturers meet your specification.
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  • Frequency : 869 to 894 MHz
  • Supply Voltage : 48 to 48 V
  • Technology : GaN on SiC
  • Transistor Type : HEMT
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
869 to 894 GHz
Power(W):
218.78 W
Gain:
20.7 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
869 to 894 GHz
Power(W):
329.61 W
Gain:
20.5 dB
Supply Voltage:
48 V
Package:
RF24001DKR3
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
869 to 894 GHz
Power(W):
194.98 W
Gain:
20.6 dB
Supply Voltage:
48 V
Package:
RF12001DKR3
more info
Description:GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
770 to 900 GHz
Power(W):
164.82 W
Gain:
20.9 dB
Supply Voltage:
48 V
Package:
NS-AS01
more info
Description:700 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
700 MHz to 1 GHz
Power:
44 dBm
Power(W):
25.12 W
Gain:
20 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:700 MHz to 1 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
700 MHz to 1 GHz
Power:
47 dBm
Power(W):
50.12 W
Gain:
20 dB
Supply Voltage:
28 to 48 V
Package:
Ceramic
more info
Description:15 Watt, 0.03 to 1.2 GHz, GaN RF Input-Matched Transistor
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement...
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
18.4 dB
Supply Voltage:
12 to 55 V
Package:
6 x 5 mm
more info
Description:8.7 W GaN RF Input-Matched Transistor from 30 MHz to 1.2 GHz
Application Industry:
Wireless Infrastructure, Radar, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
30 MHz to 1.2 GHz
Power:
38.45 dBm
Power(W):
7 W
Gain:
21 dB
Supply Voltage:
32 to 55 V
Package:
6 x 5 mm
more info
Description:DC to 1.7 GHz, HEMT Transistor
Application Industry:
Radar, Aerospace & Defence, Test & Measurement
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 1.7 GHz
Power:
56.99 dBm
Power(W):
500.03 W
Gain:
23.9 dB
Supply Voltage:
32 to 55 V
more info
Description:2.62 to 2.69 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.62 to 2.69 GHz
Power:
53.01 dBm
Power(W):
199.99 W
Gain:
23 dB
Supply Voltage:
48 V
Package:
Ceramic
more info

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