GaN Transistors

382 GaN Transistors from 10 Manufacturers meet your specification.
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Description: 400-W, 2900 to 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.9 to 3.5 GHz
Power:
56.13 to 57.28 dBm
Power(W):
534.56 W
Supply Voltage:
50 V
more info
Description: DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
41.76 dBm
Power(W):
15 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description: 280 Watts, 50 Volts, 200 us, 20% S-Band Radar 2700 - 3100 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.7 to 3.1 GHz
Power:
54.47 to 55.25 dBm
Power(W):
334.97 W
Supply Voltage:
50 V
Package:
55-KR
more info
Description: DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
DC to 4 GHz
Power:
44.77 dBm
Power(W):
29.99 W
Gain:
17 dB
Supply Voltage:
32 V
more info
Description: 100-W, 2500 to 2700-MHz, 50-V, GaN HEMT for LTE
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
2.5 to 2.7 GHz
Power:
51.3 dBm
Power(W):
134.9 W
Supply Voltage:
50 V
more info
Description: 200 Watts, 50 Volts, 200 uS, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
53.01 to 53.8 dBm
Power(W):
239.88 W
Supply Voltage:
50 V
Package:
55-QP
more info
Description: GaN Power Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
CW
Frequency:
DC to 6 GHz
Power(W):
27.99 W
Gain:
18.7 dB
Supply Voltage:
48 V
Package:
DFN66726L-Q2
more info
Description: DC to 4 GHz, HEMT Transistor
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse, CW
Frequency:
DC to 4 GHz
Power:
36.99 dBm
Power(W):
5 W
Gain:
19 dB
Supply Voltage:
32 V
more info
Description: 200-W, 1800 to 2200-MHz, GaN HEMT for LTE
Application Industry:
Wireless Infrastructure
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
1.8 to 2.2 GHz
Power(W):
239.88 W
Supply Voltage:
50 V
more info
Description: 120 Watts, 50 Volts, 300 us, 10% S-Band Radar 3100 - 3500 MHz
Application Industry:
Radar
Transistor Type:
HEMT
Technology:
GaN on SiC
CW/Pulse:
Pulse
Frequency:
3.1 to 3.5 GHz
Power:
50.79 to 51.76 dBm
Power(W):
149.97 W
Supply Voltage:
50 V
Package:
55-QP
more info
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